Atomic transistors based on seamless lateral metal-semiconductor junctions with sub-1-nm transfer… Scott Marlette Nov 23, 2022 Wafer-scale growth of PtTe2 patterns for synthetic edge contact arrays. Credit: UNIST…
Creating sub-1-nm gate lengths for MoS2 transistors Scott Marlette Mar 14, 2022 The 0.34 nm gate-length side-wall monolayer MoS2 transistor device structure and…
New IBM and Samsung transistors could be key to sub-1nm chips Scott Marlette Dec 12, 2021 IBM and Samsung claim they’ve made a breakthrough in semiconductor design. On day one of the IEDM conference in San Francisco, the two companies unveiled a…
